3.9 /spl mu/m像素间距VGA格式10b数字图像传感器，1.5晶体管/像素

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) Pub Date : 2004-09-13 DOI:10.1109/ISSCC.2004.1332617

Hidekazu Takahashi, M. Kinoshita, Kazumichi Morita, Takahiro Shirai, Toshiaki Sato, T. Kimura, H. Yuzurihara, S. Inoue

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引用次数: 11

摘要

描述了一种具有共享的1.5晶体管/像素结构和具有完全电荷转移能力的埋藏式光电二极管的CMOS图像传感器。该传感器在45/spl度/C时实现330 /spl mu/V的底噪声和50 pA/cm/sup / 2/暗电流。该芯片采用薄平面化0.35 /spl mu/m 1P2M CMOS工艺制造。

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A 3.9 /spl mu/m pixel pitch VGA format 10 b digital image sensor with 1.5-transistor/pixel

A CMOS image sensor with a shared 1.5 transistor/pixel architecture and buried photodiode with complete charge transfer capability is described. The sensor achieves a 330 /spl mu/V noise floor and 50 pA/cm/sup 2/ dark current at 45/spl deg/C. The chip is fabricated in a thin planarized 0.35 /spl mu/m 1P2M CMOS process.

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来源期刊

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)

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