基于lvpecl的130 nm SiGe BiCMOS 15 ps死区相频检测器

2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST) Pub Date : 2022-06-08 DOI:10.1109/mocast54814.2022.9837597

Franz Alwin Dürrwald, C. Hoyer, J. Wagner, F. Ellinger

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引用次数: 2

摘要

本文研究了在130nm SiGe BiCMOS技术上实现的基于低压正发射体耦合逻辑的高速相频检测器(PFD)。它旨在提供准确和快速的相位跟踪，以同步分散的时钟网络。PFD的死区约为15ps，相当于对称方波信号在1GHz时的精度为5°，并且没有盲区，是报道中最快的PFD之一，同时工作非常稳定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An LVPECL-based Phase-Frequency Detector with 15 ps Dead Zone in 130 nm SiGe BiCMOS

A high-speed phase-frequency detector (PFD) based on low-voltage positive emitter-coupled logic realized in a 130nm SiGe BiCMOS technology is investigated in this research work. It is intended for providing accurate and fast phase tracking to synchronize a network of decentralized clocks. With a dead zone of around 15ps, which equals a precision of 5° at 1GHz for symmetrical square wave signals, and no blind zone the PFD is among the fastest reported, while also operating very robustly.

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来源期刊

2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)

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