{"title":"具有电流复用和噪声消除的CMOS宽带低噪声放大器","authors":"P. Bindu, P. C. Subramaniam","doi":"10.1109/ICCSP.2011.5739401","DOIUrl":null,"url":null,"abstract":"A wide band Low Noise Amplifier (LNA) in 0.18µm CMOS technology, employing noise cancellation and current reuse, which receives different wireless standards over a frequency range of 900 MHz to 6 GHz, is designed, analyzed and simulated. The LNA provides a power gain of 17.5dB with a power dissipation of 13.7 mW, and a noise figure (NF) of 2.6 to 3.5 dB over a bandwidth of 0.9 GHz to 6 GHz.","PeriodicalId":408736,"journal":{"name":"2011 International Conference on Communications and Signal Processing","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"CMOS wide band Low Noise Amplifier with current reuse and noise cancellation\",\"authors\":\"P. Bindu, P. C. Subramaniam\",\"doi\":\"10.1109/ICCSP.2011.5739401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wide band Low Noise Amplifier (LNA) in 0.18µm CMOS technology, employing noise cancellation and current reuse, which receives different wireless standards over a frequency range of 900 MHz to 6 GHz, is designed, analyzed and simulated. The LNA provides a power gain of 17.5dB with a power dissipation of 13.7 mW, and a noise figure (NF) of 2.6 to 3.5 dB over a bandwidth of 0.9 GHz to 6 GHz.\",\"PeriodicalId\":408736,\"journal\":{\"name\":\"2011 International Conference on Communications and Signal Processing\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Communications and Signal Processing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCSP.2011.5739401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Communications and Signal Processing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCSP.2011.5739401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS wide band Low Noise Amplifier with current reuse and noise cancellation
A wide band Low Noise Amplifier (LNA) in 0.18µm CMOS technology, employing noise cancellation and current reuse, which receives different wireless standards over a frequency range of 900 MHz to 6 GHz, is designed, analyzed and simulated. The LNA provides a power gain of 17.5dB with a power dissipation of 13.7 mW, and a noise figure (NF) of 2.6 to 3.5 dB over a bandwidth of 0.9 GHz to 6 GHz.
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