超薄Si/SiO/ sub2 /结构的辐照效应

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698859

J. Cantin, H. J. von Bardeleben, J. Autran

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引用次数: 8

摘要

利用电子顺磁共振(EPR)技术研究了多孔硅衬底上生长的超薄(20-40 /spl)热氧化层对Si/SiO/ sub2 /结构的总剂量响应。分析了三种不同初始氢钝化状态样品的界面缺陷钝化改性和氧化物缺陷的产生与剂量的关系。

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Irradiation effects in ultrathin Si/SiO/sub 2/ structures

The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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