基于反馈结构的混合cmos器件鲁棒设计

Guoqing Deng, Chunhong Chen
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引用次数: 2

摘要

低温操作和背景电荷波动是实际单电子隧穿(或SET)电路的关键限制之一。特别是SET器件孤岛上的背景电荷会影响库仑阻塞振荡的相位,最终可能导致不正确的电路运行。为了构建稳健的SET电路,我们探索了基于反馈架构和SET器件新特性的新设计方法。我们首先讨论直接反馈对电路性能对背景电荷的影响。然后,我们提出了一种自适应的输入参考反馈结构,该结构可以大大降低电路行为对背景电荷波动的敏感性。一个改进的混合CMOS-SET ADC电路也作为一个例子,利用所提出的反馈结构来增强对随机背景电荷的鲁棒性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Towards robust design of hybrid CMOS-SETs using feedback architectures
Low temperature operation and background charge fluctuation are among critical limitations for practical single-electron-tunneling (or SET) based circuits. Particularly, background charges on the island of SET devices affect the phase of Coulomb blockade oscillation, and may eventually lead to incorrect circuit operation. In order to construct robust SET circuits, we explore new design methods based on feedback architectures and novel characteristics of SET devices. We first discuss the impact of a direct feedback on circuit performance against background charges. Then, we propose a self-adapted input-referred feedback structure which can drastically reduce the sensitivity of circuit behaviors to background charge fluctuations. An improved hybrid CMOS-SET ADC circuit is also presented as an example to take advantage of the proposed feedback architecture for robustness against random background charges.
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