永久延迟:90纳米CMOS技术中的单轴应变硅晶体管

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345387

K. Mistry, M. Armstrong, P. AuthChristopher, S. Cea, T. Coan, T. Ghani, T. Hoffmann, A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, Kevin Zhang, S. Thompson, M. Bohr

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引用次数: 155

摘要

本文描述了单轴应变硅晶体管的器件物理特性。单轴应变更有效，成本更低，更容易实现。迄今为止报道的最高PMOS驱动电流为:0.72mA/ /spl mu/m。讨论了模式敏感性和可移动性/ ext分区。最后，我们测量到逆变器延迟低至4.6pS，并显示50Mb sram在0.65V下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology

We describe the device physics of uniaxial strained silicon transistors. Uniaxial strain is more effective, less costly and easier to implement. The highest PMOS drive current to date is reported: 0.72mA/ /spl mu/m. Pattern sensitivity and mobility/Rext partitioning are discussed. Finally we measure inverter delays as low as 4.6pS, and show 50Mb SRAMs operational at 0.65V.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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