铁电HfZrOx Ge和GeSn pmosfet具有低于60 mV/ 10年亚阈值摆幅、可忽略的滞后和改进的Ids

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838401

Jiuren Zhou, G. Han, Qinglong Li, Yue Peng, Xiaoli Lu, Chunfu Zhang, Jincheng Zhang, Qingqing Sun, David-Wei Zhang, Y. Hao

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引用次数: 138

摘要

我们报道了第一个铁电(FE) HfZrOx (HZO) Ge和GeSn pmosfet，具有低于60 mV/ 10年的亚阈值摆幅(SS) (40 ~ 43 mV/ 10年)，可忽略的迟滞和增强的Ids。在450℃的RTA下，由于HZO引起的负电容(NC)效应，与不加FE的控制器件相比，迟滞降低40 ~ 60 mV的FE器件表现出显著改善的SS和Ids特性。在驱动电压为1.0 V时，FE Ge和GeSn pfet的Ids分别比控制器件增强22%和20%。栅极泄漏和反电容特性证明了有限元器件中的NC效应。

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Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids

We report the first ferroelectric (FE) HfZrOx (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40∼43 mV/decade), negligible hysteresis, and enhanced Ids. With a RTA at 450 oC, FE devices with reduced hysteresis of 40∼60 mV demonstrate the significantly improved SS and Ids characteristics compared to control devices without FE, owing to the negative capacitance (NC) effect induced by HZO. FE Ge and GeSn pFETs achieve 22% and 20% Ids enhancement than control devices, respectively, at the drive voltage of 1.0 V. NC effect in FE devices is proved by the gate leakage and inversion capacitance characteristics.

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2016 IEEE International Electron Devices Meeting (IEDM)

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