在(100)和(110)衬底上具有单轴应变硅通道的金属/高k栅极堆叠的高性能和低功耗CMOS器件技术

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346959

Y. Tateshita, J. Wang, K. Nagano, T. Hirano, Y. Miyanami, T. Ikuta, T. Kataoka, Y. Kikuchi, S. Yamaguchi, T. Ando, K. Tai, R. Matsumoto, S. Fujita, C. Yamane, R. Yamamoto, S. Kanda, K. Kugimiya, T. Kimura, T. Ohchi, Y. Yamamoto, Y. Nagahama, Y. Hagimoto, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, S. Kadomura, N. Nagashima

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引用次数: 24

摘要

开发了基于单轴应变硅通道的金属/高k damascene栅极堆叠的CMOS技术。HfSix栅极和TiN栅极分别应用于nfet和pfet。首次成功地集成了TiN/HfO2 damascene栅极堆和外延SiGe源/漏极。结果表明，在Vdd= 1 V、Ioff=100 nA/um和Tinv=1.6 nm时，nfet和pfet的驱动电流分别为1050和710 muA/mum。pfet在(110)衬底上的进一步集成有助于达到830 muA/mum的更高驱动电流。这些性能是在0.03 A/cm2及以下的低栅漏电流下实现的

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High-Performance and Low-Power CMOS Device Technologies Featuring Metal/High-k Gate Stacks with Uniaxial Strained Silicon Channels on (100) and (110) Substrates

CMOS technologies using metal/high-k damascene gate stacks with uniaxial strained silicon channels were developed. Gate electrodes of HfSix and TiN were applied to nFETs and pFETs, respectively. TiN/HfO2 damascene gate stacks and epitaxial SiGe source/drains were successfully integrated for the first time. As a result, drive currents of 1050 and 710 muA/mum at Vdd=l V, Ioff=100 nA/um and Tinv=1.6 nm were obtained for the nFETs and pFETs. The further integration of pFETs on (110) substrates contributed to a higher drive current of 830 muA/mum. These performances were realized under low gate leakage currents of 0.03 A/cm2 and below

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2006 International Electron Devices Meeting

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