基于半导体薄膜的气体传感器研究进展

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791587

G. Sberveglieri, C. Baratto, E. Comini, G. Faglia, P. Nelli, L. Dori

{"title":"基于半导体薄膜的气体传感器研究进展","authors":"G. Sberveglieri, C. Baratto, E. Comini, G. Faglia, P. Nelli, L. Dori","doi":"10.1109/COMMAD.1998.791587","DOIUrl":null,"url":null,"abstract":"In this paper we review the electrical properties of semiconducting layers based on metal oxide thin films used for monitoring environmental gases and examine some innovative technique to increase the sensor selectivity towards particular gases (pulsed temperature, use of UV irradiation). The sensing layers are deposited onto a micromachined silicon substrate, which is characterized by low power consumption and allowed the interface with the process electronics.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Recent progress on gas sensors based on semiconducting thin films\",\"authors\":\"G. Sberveglieri, C. Baratto, E. Comini, G. Faglia, P. Nelli, L. Dori\",\"doi\":\"10.1109/COMMAD.1998.791587\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we review the electrical properties of semiconducting layers based on metal oxide thin films used for monitoring environmental gases and examine some innovative technique to increase the sensor selectivity towards particular gases (pulsed temperature, use of UV irradiation). The sensing layers are deposited onto a micromachined silicon substrate, which is characterized by low power consumption and allowed the interface with the process electronics.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"144 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791587\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

本文综述了用于环境气体监测的基于金属氧化物薄膜的半导体层的电学特性，并研究了一些创新技术，以提高传感器对特定气体的选择性(脉冲温度，使用紫外线照射)。传感层沉积在微机械硅衬底上，其特点是低功耗，并允许与过程电子接口。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Recent progress on gas sensors based on semiconducting thin films

In this paper we review the electrical properties of semiconducting layers based on metal oxide thin films used for monitoring environmental gases and examine some innovative technique to increase the sensor selectivity towards particular gases (pulsed temperature, use of UV irradiation). The sensing layers are deposited onto a micromachined silicon substrate, which is characterized by low power consumption and allowed the interface with the process electronics.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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