一种基于tsv交叉链接的三维时钟网络合成方法,以提高鲁棒性

Rickard Ewetz, A. Udupa, G. Subbarayan, Cheng-Kok Koh
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引用次数: 2

摘要

为了获得高成品率的3D集成电路,随机开放缺陷、工艺变化和热诱发应力是合成3D时钟网络时必须解决的关键问题。目前对三维时钟合成的研究往往集中在三维时钟树拓扑结构的构建和优化上。此外,还提出了额外的电路,以实现键前测试和替换具有随机开放缺陷的硅通孔(tsv)。然而,树形结构固有地对变化具有有限的鲁棒性,并且可能遭受由缺陷和/或过程变化引起的失败。为了解决这些问题,我们建议使用tsv在3D时钟网络中增加冗余。提议的3D网络将在每个芯片上有一个完整的2D时钟网络,便于键合前测试。此外,交叉链接将使用导线插入每个模具内,并使用tsv插入跨模具,以分别提高每个模具内和跨模具内的时序稳健性。此外,时钟缓冲器被放置在具有可能影响载流子迁移率的高tsv诱导应力的区域之外。实验结果表明,所提出的三维时钟网络不存在随机开放缺陷导致的故障,与三维树形结构相比,平均偏差降低53%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A TSV-cross-link-based approach to 3D-clock network synthesis for improved robustness
To obtain high yield for 3D ICs, random open defects, process variations, and thermal induced stress are key issues that must be addressed when synthesizing 3D clock networks. Current research on 3D clock synthesis often focuses on the construction and optimization of a 3D clock tree topology. Moreover, extra circuitry has been proposed to enable pre-bond testing and substitution of through silicon vias (TSVs) with random open defects. However, tree structures inherently have limited robustness to variations and may suffer failures arising from defects and/or process variations. To counter such problems, we propose to use TSVs to add redundancy in a 3D clock network. The proposed 3D network would have a complete 2D clock network on each die, facilitating pre-bond testing. Also, cross links would be inserted within each die using wires and across dies using TSVs to improve timing robustness within each die and across dies, respectively. Moreover, clock buffers are placed outside of zones that have high TSV-induced stress that could influence carrier mobility. Experimental results show that the proposed 3D clock networks have no failures due to random open defects, and on the average have 53% lower skew compared to 3D tree structures.
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