均匀激光激发半导体产生太赫兹辐射的影响

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676543

P. A. Ziaziulia, V. Malevich, I. Manak

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引用次数: 0

摘要

从理论上解释了磁场对飞秒激光激发窄带隙半导体产生太赫兹辐射的影响。分析了采用非线性光整流的表面耗尽电场筛选对太赫兹发射的影响。研究了恒定电场作用下半导体中的自由载流子电光效应。

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Effects of terahertz radiation generation by homogeneous laser-excited semiconductors

Theoretical explanation of magnetic field impact on terahertz radiation generation by femtosecond-laser-excited narrow band-gap semiconductors is proposed. Surface depletion electric field screening influence on terahertz emission by means of nonlinear optical rectification is analyzed. Free-carrier electro-optical effect in semiconductors in the presence of the constant electric field is investigated.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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