{"title":"圆片级封装的宽带d波段腔背耦合馈电贴片天线","authors":"Xiaocheng Wang, G. Xiao, Hao Cheng","doi":"10.1109/IWS55252.2022.9977515","DOIUrl":null,"url":null,"abstract":"A broadband D-band cavity-backed coupled-feed patch antenna in wafer level package is proposed. Benefiting from the thicker dielectric substrate and the coupled feed method, the patch antenna can achieve a broadband performance with a relative bandwidth of 25.8%. The influence of surface wave caused by the thicker dielectric substrate on the radiation performance of antenna can be partially reduced using metal backed cavity. Therefore, the antenna can obtain a high gain around 7 dBi with low sidelobe. For the D-band long distance high-speed communications, the 2×4 array is formed by the proposed antenna to obtain the higher gain of around 12.7 dBi. In addition, the designed antenna can adopt wafer-level package on Benzocyclobutene (BCB) process, and the BCB material is used as the substrate and interconnection layer to achieve low-loss interconnection with the RF chip through transmission line and vias.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Broadband D-Band Cavity-Backed Coupled-Feed Patch Antenna in Wafer Level Package\",\"authors\":\"Xiaocheng Wang, G. Xiao, Hao Cheng\",\"doi\":\"10.1109/IWS55252.2022.9977515\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A broadband D-band cavity-backed coupled-feed patch antenna in wafer level package is proposed. Benefiting from the thicker dielectric substrate and the coupled feed method, the patch antenna can achieve a broadband performance with a relative bandwidth of 25.8%. The influence of surface wave caused by the thicker dielectric substrate on the radiation performance of antenna can be partially reduced using metal backed cavity. Therefore, the antenna can obtain a high gain around 7 dBi with low sidelobe. For the D-band long distance high-speed communications, the 2×4 array is formed by the proposed antenna to obtain the higher gain of around 12.7 dBi. In addition, the designed antenna can adopt wafer-level package on Benzocyclobutene (BCB) process, and the BCB material is used as the substrate and interconnection layer to achieve low-loss interconnection with the RF chip through transmission line and vias.\",\"PeriodicalId\":126964,\"journal\":{\"name\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS55252.2022.9977515\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Broadband D-Band Cavity-Backed Coupled-Feed Patch Antenna in Wafer Level Package
A broadband D-band cavity-backed coupled-feed patch antenna in wafer level package is proposed. Benefiting from the thicker dielectric substrate and the coupled feed method, the patch antenna can achieve a broadband performance with a relative bandwidth of 25.8%. The influence of surface wave caused by the thicker dielectric substrate on the radiation performance of antenna can be partially reduced using metal backed cavity. Therefore, the antenna can obtain a high gain around 7 dBi with low sidelobe. For the D-band long distance high-speed communications, the 2×4 array is formed by the proposed antenna to obtain the higher gain of around 12.7 dBi. In addition, the designed antenna can adopt wafer-level package on Benzocyclobutene (BCB) process, and the BCB material is used as the substrate and interconnection layer to achieve low-loss interconnection with the RF chip through transmission line and vias.
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