Rong Zhang, Cen Chen, Zhi Li, Z. Fu, Shengxi Diao, F. Lin
{"title":"一种双有源gm升压型无电感差分宽带低噪声放大器","authors":"Rong Zhang, Cen Chen, Zhi Li, Z. Fu, Shengxi Diao, F. Lin","doi":"10.1109/IEEE-IWS.2015.7164540","DOIUrl":null,"url":null,"abstract":"A double active gm-boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-μm RF CMOS process.Within DC-1.2GHz, the LNA achieves 20dB S21, minimal NF (with output buffer) of 3.2dB, and IIP3 of -8.9 dBm. The power consumption is 3.6mW with 1V power supply.","PeriodicalId":164534,"journal":{"name":"2015 IEEE International Wireless Symposium (IWS 2015)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A double active gm-boosted-based inductorless differential wideband low-noise amplifier\",\"authors\":\"Rong Zhang, Cen Chen, Zhi Li, Z. Fu, Shengxi Diao, F. Lin\",\"doi\":\"10.1109/IEEE-IWS.2015.7164540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A double active gm-boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-μm RF CMOS process.Within DC-1.2GHz, the LNA achieves 20dB S21, minimal NF (with output buffer) of 3.2dB, and IIP3 of -8.9 dBm. The power consumption is 3.6mW with 1V power supply.\",\"PeriodicalId\":164534,\"journal\":{\"name\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Wireless Symposium (IWS 2015)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2015.7164540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Wireless Symposium (IWS 2015)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2015.7164540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A double active gm-boosted-based inductorless differential wideband low-noise amplifier
A double active gm-boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-μm RF CMOS process.Within DC-1.2GHz, the LNA achieves 20dB S21, minimal NF (with output buffer) of 3.2dB, and IIP3 of -8.9 dBm. The power consumption is 3.6mW with 1V power supply.
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