{"title":"用金属有机化学气相沉积技术制备高生长速率透明导电氧化锌薄膜","authors":"W.W. Wenas, A. Setiawan, F. Adriyanto, H. Sangian","doi":"10.1109/COMMAD.1998.791652","DOIUrl":null,"url":null,"abstract":"Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"270 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications\",\"authors\":\"W.W. Wenas, A. Setiawan, F. Adriyanto, H. Sangian\",\"doi\":\"10.1109/COMMAD.1998.791652\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"270 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791652\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications
Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.