用金属有机化学气相沉积技术制备高生长速率透明导电氧化锌薄膜

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791652

W.W. Wenas, A. Setiawan, F. Adriyanto, H. Sangian

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引用次数: 0

摘要

以二乙基锌/H/sub 2/O和二甲基锌/H/sub 2/O为原料，采用金属有机化学气相沉积法制备了透明导电氧化锌薄膜。本研究首次引入了二甲基锌/H/亚甲基锌/O反应体系来生长ZnO薄膜。获得了10亩/米/小时的高生长率。B/sub 2/H/sub 6/为n型掺杂剂，可降低薄膜的片电阻率。通过优化B/sub 2/H/sub 6/流速，得到的薄膜电阻率低至4 /spl ω //sq。在400 ~ 1000 nm波长范围内，薄膜具有90%左右的高透光率，适合作为透明导电材料。

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High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications

Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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