High Accuracy Angelov Model for GaN HEMTs with Trapping Effects for Switch-Mode Power Amplifiers

High accuracy large signal Angelov model including higher order self-heating and trapping effects for high-power GaN HEMT is introduced. The dynamic load analysis is performed, pulsed DC and S parameter measurements have been conducted to extract an accurate large signal Angelov model for high power GaN HEMTs. Regions within the physical layers of the device trap charge depleting the active channel resulting in a reduction in performance and its impacts are investigated. The impact of the trapping effects in GaN HEMTs for switch mode RF power amplifiers are then studied by employing the extracted Angelov GaN HEMT model.