20gs /s CMOS DAC的缓冲设计及眼图表征

M. Singh, Shalabh Gupta
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引用次数: 1

摘要

高速数模转换器(dac)的出现是为了满足通信系统对高数据速率日益增长的需求。本文采用90nm CMOS技术设计了一个4位20gs /s的DAC。与化合物半导体相比,基于CMOS的dac通过完全集成数字和射频模块,提供了低成本的单IC解决方案。在本文中,使用片上线性反馈移位寄存器(LFSR)来生成所需的高速宽带数据,并使用DAC输出的眼图进行表征。为了以20 GS/s (13.1 GHz带宽)的速度驱动高容性负载以及路由、静电放电(ESD)和垫电容(≈800 fF),还实现了一种新的缓冲架构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Buffer Design and Eye-Diagram Based Characterization of a 20 GS/s CMOS DAC
High-Speed Digital-to-Analog Converters (DACs) are inevitable due to the advent of multi level modulation formats to meet the increasing demand of high data rates in communication systems. In this paper, a 4-bit 20 GS/s DAC has been designed in 90 nm CMOS technology. CMOS based DACs provide a low cost single IC solution as compared to compound semiconductor counterparts by fully integrating digital and RF blocks. In this paper, an on-chip Linear Feedback Shift Register (LFSR) is used to generate the required high-speed broadband data and eye diagram of the DAC output is used for characterization. In order to drive the high capacitive loads along with routing, Electro Static Discharge (ESD) and pad capacitance (≈800 fF) at a speed of 20 GS/s (13.1 GHz bandwidth), a new buffer architecture has also been implemented.
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