FeN和TiN薄膜在电子器件中的应用研究

J. F. Carvalho, B. C. Neto, José Weliton Nogueira Júnior, H. S. Silva, W. F. A. Borges, R. Sousa
{"title":"FeN和TiN薄膜在电子器件中的应用研究","authors":"J. F. Carvalho, B. C. Neto, José Weliton Nogueira Júnior, H. S. Silva, W. F. A. Borges, R. Sousa","doi":"10.17563/RBAV.V38I1.1124","DOIUrl":null,"url":null,"abstract":"In the present work, thin films of FeN (Iron Nitride) and TiN (Titanium Nitride) were deposited in samples of laminated glass by cathodic cage deposition technique using stainless steel and titanium cages, respectively. Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Wettability and Electrical Conductivity techniques were used to characterize the samples. To obtain the electrical conductivity values, the electrical resistivity (also known as specific electrical resistance) was calculated. In this way, the lower the resistivity, the easier is the passage of an electric charge through the material. To this purpose, it was used the four-point probes method. FeN film presented hydrophobic surface, and TiN film hydrophilic surface. Both films were promising in electrical conductivity analysis. The results show promise applications in the electronic devices.","PeriodicalId":237166,"journal":{"name":"Revista Brasileira de Aplicações de Vácuo","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of FeN and TiN thin films properties for possible application in electronic devices\",\"authors\":\"J. F. Carvalho, B. C. Neto, José Weliton Nogueira Júnior, H. S. Silva, W. F. A. Borges, R. Sousa\",\"doi\":\"10.17563/RBAV.V38I1.1124\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present work, thin films of FeN (Iron Nitride) and TiN (Titanium Nitride) were deposited in samples of laminated glass by cathodic cage deposition technique using stainless steel and titanium cages, respectively. Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Wettability and Electrical Conductivity techniques were used to characterize the samples. To obtain the electrical conductivity values, the electrical resistivity (also known as specific electrical resistance) was calculated. In this way, the lower the resistivity, the easier is the passage of an electric charge through the material. To this purpose, it was used the four-point probes method. FeN film presented hydrophobic surface, and TiN film hydrophilic surface. Both films were promising in electrical conductivity analysis. The results show promise applications in the electronic devices.\",\"PeriodicalId\":237166,\"journal\":{\"name\":\"Revista Brasileira de Aplicações de Vácuo\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Revista Brasileira de Aplicações de Vácuo\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.17563/RBAV.V38I1.1124\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Revista Brasileira de Aplicações de Vácuo","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17563/RBAV.V38I1.1124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文采用阴极笼沉积技术,分别采用不锈钢笼和钛笼在夹层玻璃样品中沉积了氮化铁(FeN)和氮化钛(TiN)薄膜。利用扫描电镜(SEM)、能量色散x射线能谱(EDS)、润湿性和电导率技术对样品进行表征。为了获得电导率值,计算电阻率(也称为比电阻)。这样,电阻率越低,电荷就越容易通过材料。为此,采用四点探针法。FeN膜呈现疏水性表面,TiN膜呈现亲水性表面。这两种薄膜在电导率分析中都很有前景。研究结果在电子器件中具有广阔的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of FeN and TiN thin films properties for possible application in electronic devices
In the present work, thin films of FeN (Iron Nitride) and TiN (Titanium Nitride) were deposited in samples of laminated glass by cathodic cage deposition technique using stainless steel and titanium cages, respectively. Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDS), Wettability and Electrical Conductivity techniques were used to characterize the samples. To obtain the electrical conductivity values, the electrical resistivity (also known as specific electrical resistance) was calculated. In this way, the lower the resistivity, the easier is the passage of an electric charge through the material. To this purpose, it was used the four-point probes method. FeN film presented hydrophobic surface, and TiN film hydrophilic surface. Both films were promising in electrical conductivity analysis. The results show promise applications in the electronic devices.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信