日新月异的人工智能时代中记忆的崛起——从记忆到超越记忆

Seok-Hee Lee
{"title":"日新月异的人工智能时代中记忆的崛起——从记忆到超越记忆","authors":"Seok-Hee Lee","doi":"10.1109/vlsitechnologyandcir46769.2022.9830265","DOIUrl":null,"url":null,"abstract":"Innovation in the memory semiconductor industry has continued to provide a number of key solutions to address the challenges of ever-changing, data-driven computing. However, besides the demand for high performance, low power, low cost, and high capacity, there is also an increasing demand for more smart functionalities in or near memory to minimize the data movement.In this paper, we will share our vision of memory innovation. First, we begin the journey with memory extension, in which the conventional scaling in both DRAM and NAND can be pushed further to defy the device scaling limits. Then, the journey will ultimately lead to the memory-centric transformation. The memory-centric transformation has just begun with PIM (Processing-In-Memory) and is expected to evolve by bringing memory and logic closer together with advanced packaging techniques in order to achieve optimal system performance.In addition, new solutions enabled by new interfaces such as CXL (Compute Express Link) will be introduced to enhance the current value proposition of the memory technology.Last but not least, our endeavors as a responsible member of the global community will be introduced. Our ongoing efforts are focused on reducing carbon emissions, water usage, and power consumption in all our products and manufacturing processes.SK hynix truly believes that the journey of Memory would only be possible when the ICT industry as a whole embraces open innovation to create a better and more sustainable world.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Rise of Memory in the Ever-Changing AI Era – From Memory to More-Than-Memory\",\"authors\":\"Seok-Hee Lee\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830265\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Innovation in the memory semiconductor industry has continued to provide a number of key solutions to address the challenges of ever-changing, data-driven computing. However, besides the demand for high performance, low power, low cost, and high capacity, there is also an increasing demand for more smart functionalities in or near memory to minimize the data movement.In this paper, we will share our vision of memory innovation. First, we begin the journey with memory extension, in which the conventional scaling in both DRAM and NAND can be pushed further to defy the device scaling limits. Then, the journey will ultimately lead to the memory-centric transformation. The memory-centric transformation has just begun with PIM (Processing-In-Memory) and is expected to evolve by bringing memory and logic closer together with advanced packaging techniques in order to achieve optimal system performance.In addition, new solutions enabled by new interfaces such as CXL (Compute Express Link) will be introduced to enhance the current value proposition of the memory technology.Last but not least, our endeavors as a responsible member of the global community will be introduced. Our ongoing efforts are focused on reducing carbon emissions, water usage, and power consumption in all our products and manufacturing processes.SK hynix truly believes that the journey of Memory would only be possible when the ICT industry as a whole embraces open innovation to create a better and more sustainable world.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830265\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

存储半导体行业的创新不断提供许多关键解决方案,以应对不断变化的数据驱动计算的挑战。然而,除了对高性能、低功耗、低成本和高容量的需求之外,对内存或内存附近的更智能功能的需求也在不断增加,以最大限度地减少数据移动。在本文中,我们将分享我们对内存创新的看法。首先,我们从内存扩展开始,其中DRAM和NAND的传统扩展可以进一步推动,以突破设备扩展限制。然后,这段旅程将最终导致以记忆为中心的转变。以内存为中心的转变刚刚开始于PIM(内存中处理),并有望通过将内存和逻辑与先进的封装技术紧密结合在一起,以实现最佳的系统性能。此外,将引入由CXL (Compute Express Link)等新接口支持的新解决方案,以增强内存技术的当前价值主张。最后,我将介绍我们作为国际社会负责任一员的努力。我们持续努力的重点是减少所有产品和制造过程中的碳排放、用水和电力消耗。SK海力士坚信,只有整个信息通信技术(ICT)产业以开放创新的方式创造一个更美好、更可持续的世界,记忆之旅才有可能实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The Rise of Memory in the Ever-Changing AI Era – From Memory to More-Than-Memory
Innovation in the memory semiconductor industry has continued to provide a number of key solutions to address the challenges of ever-changing, data-driven computing. However, besides the demand for high performance, low power, low cost, and high capacity, there is also an increasing demand for more smart functionalities in or near memory to minimize the data movement.In this paper, we will share our vision of memory innovation. First, we begin the journey with memory extension, in which the conventional scaling in both DRAM and NAND can be pushed further to defy the device scaling limits. Then, the journey will ultimately lead to the memory-centric transformation. The memory-centric transformation has just begun with PIM (Processing-In-Memory) and is expected to evolve by bringing memory and logic closer together with advanced packaging techniques in order to achieve optimal system performance.In addition, new solutions enabled by new interfaces such as CXL (Compute Express Link) will be introduced to enhance the current value proposition of the memory technology.Last but not least, our endeavors as a responsible member of the global community will be introduced. Our ongoing efforts are focused on reducing carbon emissions, water usage, and power consumption in all our products and manufacturing processes.SK hynix truly believes that the journey of Memory would only be possible when the ICT industry as a whole embraces open innovation to create a better and more sustainable world.
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