超低能砷植入对薄片电阻和结深的限制

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852790

R. Kasnavi, P. Griffin, J. Plummer

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引用次数: 10

摘要

我们研究了超低能量As植入和RTA退火对薄片电阻、结深和粗糙度的限制。我们报告了1 keV砷植入物的异常扩散，其中相同的RTA退火可以导致与相似剂量的5 keV植入物相比更深的结。研究了RTA的退火时间和温度范围，从1020℃到1175℃，包括尖峰退火。研究了结突度对降低5 keV和1 keV As植入物S/D扩展外阻的影响。我们表明，由于结深和片电阻限制之间的权衡，1 keV As植入物和RTA退火不能满足2005年以后的技术路线图要求，尽管结突度将满足要求直到2011年。

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Ultra low energy arsenic implant limits on sheet resistance and junction depth

We have investigated the limits on sheet resistance, junction depth and abruptness using ultra low energy As implants and RTA annealing. We report on anomalous diffusion of 1 keV arsenic implants where the same RTA anneal can result in a deeper junction compared to a 5 keV implant of similar dose. A range of anneal times and temperatures in an RTA from 1020C to 1175C, including spike anneals, have been studied. The effect of junction abruptness in reducing the external resistance of the S/D extension for these 5 and 1 keV As implants has been investigated. We show that because of a trade off between junction depth and sheet resistance limits, 1 keV As implants and RTA anneals cannot meet the technology roadmap requirements beyond 2005, though the junction abruptness will meet the requirements till 2011.

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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