双雪崩区IMPATT二极管的数值分析与优化

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676322

A. Zemliak, S. Cabrera

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引用次数: 0

摘要

基于非线性模型和特殊的优化程序，对包含两个雪崩区的雪崩二极管结构进行了分析和优化。分析了该类二极管在极宽频段内的导纳和能量特性。优化了220 GHz附近第二频段的输出功率水平。

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Numerical analysis and optimization of double avalanche region IMPATT diode

The analysis and optimization of the avalanche diode structure that includes two avalanche regions have been realized on basis of the nonlinear model and special optimization procedure. The admittance and energy characteristics of this type of diode were analyzed in very wide frequency band. Output power level was optimized for the second frequency band near the 220 GHz.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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