gaas中si供体的远红外光导实验

1987 Twelth International Conference on Infrared and Millimeter Waves Pub Date : 1987-12-01 DOI:10.1109/irmm.1987.9127018

A. Labrujere, T. Klaassen, W. Wenckebach, C. Foxon

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引用次数: 0

摘要

利用工作在10 ~ 150 cm范围内的光泵浦FIR激光器，研究了Si掺杂GaAs的远红外光电导率。在温度介于H和10k之间，在高达12t的磁场中，观察到从浅层(Si)供体基态到激发态氢能级(n = 2,3,4)的几乎完整的转变。所得的能级场依赖性与理论计算结果吻合较好。

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Far infrared photoconductivity experiments on the si donor in gaas

The far infrared photoconductivity of Si doped GaAs has been studied using an optically pumped FIR laser working in the 10-150 cm range. At temperatures between H and 10 K in magnetic fields up to 12 T an almost complete set of transitions from the shallow (Si) donor groundstate to the excited hydrogenic levels (n = 2,3,4) is observed. The obtained field dependence of the energy levels is in good agreement with theoretical calculations.

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来源期刊

1987 Twelth International Conference on Infrared and Millimeter Waves

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