{"title":"5G高效多尔蒂放大器负载网络的实现方法","authors":"Anil M. Birajdar, A. Deshmane","doi":"10.1109/IATMSI56455.2022.10119315","DOIUrl":null,"url":null,"abstract":"In this work, a design of a 3-stage power amplifier with the final stage as a Doherty in Ka-band is presented, using the Gallium Arsenide (GaAs) p-HEMT process for 5G application. This amplifier achieves a 24.4 dB of small-signal gain, output power greater than 3W i.e., 34.8 dBm, over 39.2% of peak power added efficiency (PAE) at 1 dB compression, and PAE of 38.6% and 27.5% are obtained at 3 dB, 6 dB back-off respectively in the frequency band of 26.5 - 27.5 GHz.","PeriodicalId":221211,"journal":{"name":"2022 IEEE Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)","volume":"249 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Method To Implement Load Network for High-Efficiency Doherty Amplifier for 5G Application\",\"authors\":\"Anil M. Birajdar, A. Deshmane\",\"doi\":\"10.1109/IATMSI56455.2022.10119315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a design of a 3-stage power amplifier with the final stage as a Doherty in Ka-band is presented, using the Gallium Arsenide (GaAs) p-HEMT process for 5G application. This amplifier achieves a 24.4 dB of small-signal gain, output power greater than 3W i.e., 34.8 dBm, over 39.2% of peak power added efficiency (PAE) at 1 dB compression, and PAE of 38.6% and 27.5% are obtained at 3 dB, 6 dB back-off respectively in the frequency band of 26.5 - 27.5 GHz.\",\"PeriodicalId\":221211,\"journal\":{\"name\":\"2022 IEEE Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)\",\"volume\":\"249 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IATMSI56455.2022.10119315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IATMSI56455.2022.10119315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Method To Implement Load Network for High-Efficiency Doherty Amplifier for 5G Application
In this work, a design of a 3-stage power amplifier with the final stage as a Doherty in Ka-band is presented, using the Gallium Arsenide (GaAs) p-HEMT process for 5G application. This amplifier achieves a 24.4 dB of small-signal gain, output power greater than 3W i.e., 34.8 dBm, over 39.2% of peak power added efficiency (PAE) at 1 dB compression, and PAE of 38.6% and 27.5% are obtained at 3 dB, 6 dB back-off respectively in the frequency band of 26.5 - 27.5 GHz.
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