绝缘体上硅衬底侧双极结晶体管的射频模型

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635270

D. Lee, I.-S.M. Sun, W. Ng

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引用次数: 0

摘要

描述了一种新型高频侧双极结晶体管(LBJT)的建模方法。采用改进的SPICE-Gummel-Poon (SGP)模型模拟器件，SGP参数根据晶体管的物理几何形状确定。利用该模型进行了直流、交流和s参数模拟，并对实测数据进行了验证。结果表明，LBJT的新型几何结构减少了二阶效应的影响，有利于建模。

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RF Model of Lateral Bipolar Junction Transistor on Silicon-on-Insulator Substrate

A methodology for modelling a novel highfrequency lateral bipolar junction transistor (LBJT) is described. A modified SPICE-Gummel-Poon (SGP) model is used to simulate the device, with the SGP parameters determined based on the transistor's physical geometry. DC, AC, and S-parameter simulations using this model are verified against measured data. The results show good matching and demonstrates that the novel geometry of the LBJT facilitates modelling by reducing the influence of second order effects.

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2005 IEEE Conference on Electron Devices and Solid-State Circuits

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