体应变硅nmosfet的漏极电流模型

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2012-03-14 DOI:10.1109/ICCDCS.2012.6188937

J. Tinoco, J. Alvarado, A. G. Martinez-Lopez, Benjamin Iniguez, A. Cerdeira

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引用次数: 4

摘要

在本文中，我们建立了一个解析模型来模拟应变硅nmosfet，它允许描述漏极电流。为了验证模型，进行了数值模拟，其中考虑了不同的工艺参数(例如Si1-yGey和应变硅薄膜中的杂质浓度)。所得结果与数值模拟结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Drain current model for bulk strained silicon NMOSFETs

In this paper, we develop an analytical model to simulate strained silicon NMOSFETs, which allows to describe the drain current. Numerical simulations were performed in order to validate the model, where different technological parameters were considered (e.g. impurity concentrations in Si1-yGey and strained-silicon films). A good agreement with numerical simulations has been obtained.

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来源期刊

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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