TMR器件在固态电路和系统中的应用

2010 International SoC Design Conference Pub Date : 2010-12-01 DOI:10.1109/SOCDC.2010.5682923

Yiran Chen, H. Li, Xiaobin Wang, Jongsun Park

{"title":"TMR器件在固态电路和系统中的应用","authors":"Yiran Chen, H. Li, Xiaobin Wang, Jongsun Park","doi":"10.1109/SOCDC.2010.5682923","DOIUrl":null,"url":null,"abstract":"Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device — a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example — nondestructive self-reference sensing technology.","PeriodicalId":380183,"journal":{"name":"2010 International SoC Design Conference","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Applications of TMR devices in solid state circuits and systems\",\"authors\":\"Yiran Chen, H. Li, Xiaobin Wang, Jongsun Park\",\"doi\":\"10.1109/SOCDC.2010.5682923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device — a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example — nondestructive self-reference sensing technology.\",\"PeriodicalId\":380183,\"journal\":{\"name\":\"2010 International SoC Design Conference\",\"volume\":\"143 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2010.5682923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2010.5682923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

自旋电子器件作为一种在非易失性存储器和基于忆阻器系统的新兴电路设计中具有应用前景的器件，近年来引起了固体电路界的广泛关注。本文介绍了隧道磁阻(TMR)器件——一种流行的自旋电子器件结构及其在1)多层单元存储器设计中的应用;2)忆阻器件(忆阻器);3)一个特殊的电路设计实例——无损自参考传感技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Applications of TMR devices in solid state circuits and systems

Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device — a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example — nondestructive self-reference sensing technology.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 International SoC Design Conference

自引率

0.00%

发文量