静电转导面剪切模式硅MEMS微谐振器

A. T. Lin, Jize Yan, A. Seshia
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引用次数: 11

摘要

硅微谐振器由于其小型化和与CMOS集成的潜力,越来越被视为各种频率选择信号处理应用的有吸引力的候选者。在这项工作中,我们提出了一种新的静电转导面剪切(FS)模式方板单晶硅谐振器,与先前报道的体模谐振器拓扑结构相媲美,并表现出良好的频率缩放。边长为800µm的面剪切谐振器谐振频率为3.638 MHz,空气中Q值为11193,真空中Q值为836283,TCF值为- 19ppm/K。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrostatically transduced face-shear mode silicon MEMS microresonator
Silicon microresonators are increasingly viewed as attractive candidates for a variety of frequency selective signal processing applications due to miniaturization and potential for integration with CMOS. In this work, we present a new electrostatically transduced face-shear (FS) mode square plate single crystal silicon resonator that rivals previously reported bulk mode resonator topologies and demonstrates good frequency scaling. A microfabricated face-shear mode resonator with 800 µm side length demonstrates a resonant frequency of 3.638 MHz, Q of 11193 in air and 836283 in vacuum as well as a TCF of −19ppm/K.
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