具有休眠晶体管电荷回收的低能量MTCMOS

Zhiyu Liu, V. Kursun
{"title":"具有休眠晶体管电荷回收的低能量MTCMOS","authors":"Zhiyu Liu, V. Kursun","doi":"10.1109/MWSCAS.2007.4488714","DOIUrl":null,"url":null,"abstract":"A new circuit technique is proposed in this paper to lower the energy overhead of mode transitions for effective energy reduction with the MTCMOS circuits. The charge stored at the virtual rails and the sleep signal lines are recycled during the active-to-sleep-to-active mode transitions with the proposed technique. Applying the charge recycling MTCMOS circuit technique to a 32-bit Brent-Kung adder reduces the energy overhead due to the mode transitions by up to 12.2% as compared to the conventional MTCMOS circuits. Furthermore, the standby mode power consumption is reduced by up to 92.8% as compared to a standard Brent-Kung adder in a 65 nm CMOS technology.","PeriodicalId":256061,"journal":{"name":"2007 50th Midwest Symposium on Circuits and Systems","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Low energy MTCMOS with sleep transistor charge recycling\",\"authors\":\"Zhiyu Liu, V. Kursun\",\"doi\":\"10.1109/MWSCAS.2007.4488714\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new circuit technique is proposed in this paper to lower the energy overhead of mode transitions for effective energy reduction with the MTCMOS circuits. The charge stored at the virtual rails and the sleep signal lines are recycled during the active-to-sleep-to-active mode transitions with the proposed technique. Applying the charge recycling MTCMOS circuit technique to a 32-bit Brent-Kung adder reduces the energy overhead due to the mode transitions by up to 12.2% as compared to the conventional MTCMOS circuits. Furthermore, the standby mode power consumption is reduced by up to 92.8% as compared to a standard Brent-Kung adder in a 65 nm CMOS technology.\",\"PeriodicalId\":256061,\"journal\":{\"name\":\"2007 50th Midwest Symposium on Circuits and Systems\",\"volume\":\"209 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 50th Midwest Symposium on Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2007.4488714\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 50th Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2007.4488714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

摘要

本文提出了一种新的电路技术,以降低模式转换的能量开销,从而有效地降低MTCMOS电路的能量。在活动-睡眠-活动模式转换过程中,存储在虚拟轨道和睡眠信号线上的电荷被循环利用。与传统的MTCMOS电路相比,将电荷回收MTCMOS电路技术应用于32位Brent-Kung加法器,可将模式转换引起的能量开销降低12.2%。此外,与采用65nm CMOS技术的标准Brent-Kung加法器相比,待机模式功耗降低高达92.8%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low energy MTCMOS with sleep transistor charge recycling
A new circuit technique is proposed in this paper to lower the energy overhead of mode transitions for effective energy reduction with the MTCMOS circuits. The charge stored at the virtual rails and the sleep signal lines are recycled during the active-to-sleep-to-active mode transitions with the proposed technique. Applying the charge recycling MTCMOS circuit technique to a 32-bit Brent-Kung adder reduces the energy overhead due to the mode transitions by up to 12.2% as compared to the conventional MTCMOS circuits. Furthermore, the standby mode power consumption is reduced by up to 92.8% as compared to a standard Brent-Kung adder in a 65 nm CMOS technology.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信