沉淀条件对非晶氢化碳膜生长速度、组成和结构影响的合成和建模

V. Tarala, B. Sinelnikov, M. Shevchenko
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引用次数: 0

摘要

本文研究了合成条件对非晶氢化碳(a-C:H)膜沉淀工艺性能的影响。在非晶和结晶材料的沉淀和生长模型的框架下,分析了工艺参数(甲烷分压PCH4、HF辐射功率W和自偏置Ubias)对a-C:H膜的沉淀速度、组成和结构的影响[1]。结果表明:生长速度与√P(CH4)成正比,sp2杂化碳分数与1/√P(CH4)成正比;增加甲烷压力或降低HF辐射功率和自偏置会产生更高的键氢浓度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and modeling of influence of precipitation conditions on growth speed, composition and structure of amorphous hydrogenised carbon films
This researh is devoted to evaluation of synthesis condition influence on properties of amorphous hydrogenised carbon (a-C:H) film precipitation processes. Analysis of technological parameters (partial methane pressure PCH4, power of HF radiation W and self-bias Ubias) impact on precipitation speed, composition and structure of a-C:H films is presented in the frame of precipitation and growth of amorphous and crystalline materials model [1]. It is shown that growth speed is proportional to √P(CH4) and fraction of sp2-hybridised carbon is proportional to 1/√P(CH4); increase of methane pressure or decrease of HF radiation power and self-bias yields higher bonded hydrogen concentration.
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