A physics based compact model for drain current in AlGaN/GaN HEMT devices

In this paper we present a physics based analytical model for the drain current Id in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density ns model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation, and self-heating. The model is in excellent agreement with the experimental data over a typical range of applied gate and drain voltages for various device geometries.