使用InGaAlAsSb设计可实现的全晶格匹配多结太阳能电池

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI:10.1109/PVSC.2011.6185859

R. Walters, M. González, J. Tischler, M. Lumb, J. Meyer, I. Vurgaftman, J. Abell, M. Yakes, N. Ekins‐Daukes, J. Adams, N. Chan, P. Stavrinou, P. Jenkins

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引用次数: 34

摘要

提出了一种实际可行的、基于所有晶格匹配材料的多结太阳能电池的设计，该电池在浓度下具有>50%的预计效率。使用与InP衬底相匹配的四元材料，如InAlAsSb和InGaAlAs，可以实现从0.74eV到~ 1.8eV的直接带隙，这是太阳能转换的理想选择。此外，采用多量子阱结构将带隙进一步减小到<0.7 eV。描述了使用这些材料的三结(3J)太阳能电池，并给出了深入的建模结果，显示了AM1.5D 500X的η ~ 53%和AM0 1 Sun的η ~ 37%的实际可实现的效率。

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Design of an achievable, all lattice-matched multijunction solar cell using InGaAlAsSb

A design for a realistically achievable, multijunction solar cell based on all lattice-matched materials with >50% projected efficiencies under concentration is presented. Using quaternary materials such as InAlAsSb and InGaAlAs at stochiometries lattice-matched to InP substrates, direct bandgaps ranging from 0.74eV up to ∼1.8eV, ideal for solar energy conversion, can be achieved. In addition, multi-quantum well structures are used to reduce the band-gap further to <0.7 eV. A triple-junction (3J) solar cell using these materials is described, and in-depth modeling results are presented showing realistically achievable efficiencies of AM1.5D 500X of η ∼ 53% and AM0 1 Sun of η∼ 37%.

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来源期刊

2011 37th IEEE Photovoltaic Specialists Conference

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