射频多鳍场效应管中的寄生最小化

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635272

Wen Wu, Zhikuan Zhang, M. Chan

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引用次数: 2

摘要

本文研究了多鳍MOS器件中寄生效应的最小化问题。提出了一种最小化栅极电阻的分布式RC模型，并深入研究了器件几何参数对栅极RC延迟的影响。同时，给出了射频器件设计中栅极电阻最小的准则。此外，还讨论了降低源漏寄生电阻和寄生电容的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Parasitic Minimization in RF Multi-Fin FETs

This paper studies the minimization of parasitics in multi-fin MOS devices. A distributed RC model is provided to minimize the gate resistances and the influence of device geometrical parameters on gate RC delay is thoroughly investigated. Also, we give a criterion to achieve the minimal gate resistance for RF device design. Furthermore, methods of reducing source/drain parasitic resistances and capacitances are discussed.

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来源期刊

2005 IEEE Conference on Electron Devices and Solid-State Circuits

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