高压横向DMOS晶体管EKV紧凑模型扩展

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088540

N. Hefyene, J. Sallese, C. Anghel, Adrian M. Ionescu, S. Frere, Renaud Gillon

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引用次数: 9

摘要

本文首次对高压mosfet的EKV紧凑模型进行了扩展。推导了DMOS晶体管漂移偏置电阻的连续表达式，并在不同的工作区域(线性和饱和状态下)进行了验证。当与EKV相结合时，所提出的新漂移模型提供了非常精确的直流建模，包括准饱和。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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EKV compact model extension for HV lateral DMOS transistors

This paper reports for the first time on the extension of the EKV compact model for high-voltage (HV) MOSFETs. A continuous expression is derived for the drift bias-dependent resistance of DMOS transistors and then validated in different operation regions (in linear and saturation regimes). When combined with EKV, the proposed new drift model provides very accurate DC modeling including quasi-saturation.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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