{"title":"利用氮化镓场效应管增强双开关正激变换器的性能","authors":"K. Alatawi, Fahad M. Almasoudi, M. Matin","doi":"10.1109/NAPS.2016.7747972","DOIUrl":null,"url":null,"abstract":"In this paper, a Two-Switch forward converter using enhancement mode Gallium Nitride transistors (GaN FETs) operating in CCM is designed for low power and high frequency applications. This topology provides a galvanic isolated, simple and efficient approach which will be suitable to use in battery charge circuits. The performance of the converter is evaluated using Si MOSFETs and GaN FETs. Comparison of the switching characteristics performance and the overall efficiency of the converter using Si MOSFTEs and GaN FETs are presented and discussed. The results are presented for a 100W, 200-24 V converter operating at two switching frequencies 100KHz and 500KHz.","PeriodicalId":249041,"journal":{"name":"2016 North American Power Symposium (NAPS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Performance enhancement of two-switch forward converter using GaN FETs\",\"authors\":\"K. Alatawi, Fahad M. Almasoudi, M. Matin\",\"doi\":\"10.1109/NAPS.2016.7747972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a Two-Switch forward converter using enhancement mode Gallium Nitride transistors (GaN FETs) operating in CCM is designed for low power and high frequency applications. This topology provides a galvanic isolated, simple and efficient approach which will be suitable to use in battery charge circuits. The performance of the converter is evaluated using Si MOSFETs and GaN FETs. Comparison of the switching characteristics performance and the overall efficiency of the converter using Si MOSFTEs and GaN FETs are presented and discussed. The results are presented for a 100W, 200-24 V converter operating at two switching frequencies 100KHz and 500KHz.\",\"PeriodicalId\":249041,\"journal\":{\"name\":\"2016 North American Power Symposium (NAPS)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 North American Power Symposium (NAPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAPS.2016.7747972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 North American Power Symposium (NAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAPS.2016.7747972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance enhancement of two-switch forward converter using GaN FETs
In this paper, a Two-Switch forward converter using enhancement mode Gallium Nitride transistors (GaN FETs) operating in CCM is designed for low power and high frequency applications. This topology provides a galvanic isolated, simple and efficient approach which will be suitable to use in battery charge circuits. The performance of the converter is evaluated using Si MOSFETs and GaN FETs. Comparison of the switching characteristics performance and the overall efficiency of the converter using Si MOSFTEs and GaN FETs are presented and discussed. The results are presented for a 100W, 200-24 V converter operating at two switching frequencies 100KHz and 500KHz.
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