InGaAs/InAlAs/InP光电场效应管和微收发器的加工和设计技术

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328241

E. Martín, K. Vaccaro, W. Waters, S. Spaziani, J. P. Lorenzo, G. Robinson

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引用次数: 1

摘要

尽管InGaAs/InAlAs/InP光电场效应管在电光系统应用中具有理论上的优势，但完全优化的器件结构和处理协议尚未开发。我们在这里报告了针对这种优化的几种设备变化的结果。这包括HEMT通道厚度和电流密度的变化，洞阻塞InGaAs/InAlAs异质结的分级。针对优化的分立元件和集成器件，探索了一种具有背面照明和正面和背面钝化的新型衬底去除工艺。许多这些进步都适用于MSM光电探测器和光电场效应管;给出了各自的结果。

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Processing and design techniques for InGaAs/InAlAs/InP photoFETs and MSMs

Despite the theoretical advantages of InGaAs/InAlAs/InP photoFETs for electro-optical system applications, fully optimized device structures and processing protocols have yet to be developed. We report here results from several device variations directed toward such optimization. This includes variation of HEMT channel thickness and current density, grading of the hole-blocking InGaAs/InAlAs heterojunction. A novel substrate removal process with backside illumination, and frontside and backside passivation is explored for optimized discrete components as well as integrated devices. Many of these advances are applicable to both MSM photodetectors and photoFETs; results from each are presented.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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