具有高C波段和l波段响应性的高带宽波导耦合锗p-i-n光电二极管

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI:10.1109/GROUP4.2015.7305932

S. Lischke, D. Knoll, C. Mai, A. Peczek, K. Voigt, E. Krune, K. Petermann, L. Zimmermann, A. Mai

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引用次数: 7

摘要

我们提出了一个锗光电二极管，在- 2v偏压下，整个C和l波段的响应率超过0.8A/W，以及40GHz的零偏压带宽，这极大地扩展了硅光子学的应用范围。

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High-bandwidth, waveguide-coupled Ge p-i-n photodiode with high C- and L-band responsivity

We present a germanium photodiode showing, at -2V bias, responsivity exceeding 0.8A/W across the entire C- and L-band, together with 40GHz zero bias bandwidth, which strongly extends the application range of silicon photonics.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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