具有任意分裂比的三层垂直y结Si3N4/SiO2三维光子集成电路

2016 Optical Fiber Communications Conference and Exhibition (OFC) Pub Date : 2016-03-20 DOI:10.1364/OFC.2016.TU3E.3

K. Shang, S. Pathak, B. Guan, Guangyao Liu, S. Feng, S. Yoo

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引用次数: 4

摘要

我们设计了具有任意分裂比和低反射的Si3N4三层垂直y结，制作了双层非对称垂直耦合器，并演示了用于多层光子集成电路的分裂比为1:1和3:2的三层垂直y结。

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Tri-layer, vertical Y-junction, Si3N4/SiO2 3D photonic integrated circuits with arbitrary splitting ratio

We design Si3N4 tri-layer vertical Y-junction with arbitrary splitting ratio and low reflection, fabricate bi-layer asymmetric vertical coupler, and demonstrate tri-layer vertical Y-junction with splitting ratio of 1:1 and 3:2 for multilayer photonic integrated circuits.

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2016 Optical Fiber Communications Conference and Exhibition (OFC)

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