{"title":"采用新型图型技术的极尺度底栅a- igzo晶体管实现了479.5 μS/μm (VDS为1 V)和18.3 GHz (VDS为3 V)的创纪录高Gm和fT","authors":"Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong","doi":"10.1109/vlsitechnologyandcir46769.2022.9830393","DOIUrl":null,"url":null,"abstract":"In this work, we report bottom-gate amorphous indium-gallium-zinc-oxide (a-IGZO) transistors with extremely scaled channel length (L<inf>CH</inf>) down to 12.3 nm enabled by a novel Al<inf>2</inf>O<inf>3</inf>/HSQ dual-layer lift-off technique. Thanks to the smallest L<inf>CH</inf> of 12.3 nm among all bottom-gate IGZO transistors, a record high peak extrinsic transconductance (G<inf>m,ext</inf>) of 479.5 μS/μm at V<inf>DS</inf> = 1 V was realized among all IGZO-based transistors. In addition to the capability of realizing ultra-scaled feature sizes, the Al<inf>2</inf>O<inf>3</inf>/HSQ dual-layer lift-off process can achieve a reduced patterning variation as compared with that of the conventional lift-off process due to the better line edge roughness of hydrogen silsesquioxane (HSQ) electron-beam (E-beam) resist. The highest cut-off frequency (f<inf>T</inf>) of 18.3 GHz at V<inf>DS</inf> of 3 V was also achieved with a L<inf>CH</inf> of 38 nm among all a-IGZO transistors.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)\",\"authors\":\"Chengkuan Wang, Annie Kumar, Kaizhen Han, Chen Sun, Haiwen Xu, Jishen Zhang, Yuye Kang, Qiwen Kong, Zijie Zheng, Yuxuan Wang, Xiao Gong\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report bottom-gate amorphous indium-gallium-zinc-oxide (a-IGZO) transistors with extremely scaled channel length (L<inf>CH</inf>) down to 12.3 nm enabled by a novel Al<inf>2</inf>O<inf>3</inf>/HSQ dual-layer lift-off technique. Thanks to the smallest L<inf>CH</inf> of 12.3 nm among all bottom-gate IGZO transistors, a record high peak extrinsic transconductance (G<inf>m,ext</inf>) of 479.5 μS/μm at V<inf>DS</inf> = 1 V was realized among all IGZO-based transistors. In addition to the capability of realizing ultra-scaled feature sizes, the Al<inf>2</inf>O<inf>3</inf>/HSQ dual-layer lift-off process can achieve a reduced patterning variation as compared with that of the conventional lift-off process due to the better line edge roughness of hydrogen silsesquioxane (HSQ) electron-beam (E-beam) resist. The highest cut-off frequency (f<inf>T</inf>) of 18.3 GHz at V<inf>DS</inf> of 3 V was also achieved with a L<inf>CH</inf> of 38 nm among all a-IGZO transistors.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Extremely Scaled Bottom Gate a-IGZO Transistors Using a Novel Patterning Technique Achieving Record High Gm of 479.5 μS/μm (VDS of 1 V) and fT of 18.3 GHz (VDS of 3 V)
In this work, we report bottom-gate amorphous indium-gallium-zinc-oxide (a-IGZO) transistors with extremely scaled channel length (LCH) down to 12.3 nm enabled by a novel Al2O3/HSQ dual-layer lift-off technique. Thanks to the smallest LCH of 12.3 nm among all bottom-gate IGZO transistors, a record high peak extrinsic transconductance (Gm,ext) of 479.5 μS/μm at VDS = 1 V was realized among all IGZO-based transistors. In addition to the capability of realizing ultra-scaled feature sizes, the Al2O3/HSQ dual-layer lift-off process can achieve a reduced patterning variation as compared with that of the conventional lift-off process due to the better line edge roughness of hydrogen silsesquioxane (HSQ) electron-beam (E-beam) resist. The highest cut-off frequency (fT) of 18.3 GHz at VDS of 3 V was also achieved with a LCH of 38 nm among all a-IGZO transistors.