{"title":"用于45nm SOI CMOS多频段TDD无线电的频率敏捷射频前端","authors":"Sushmit Goswami, Helen Kim, J. Dawson","doi":"10.1109/RFIC.2013.6569596","DOIUrl":null,"url":null,"abstract":"A tunable and highly digital RF frontend for multi-band TDD radios is integrated in 45nm SOI CMOS. The PA absorbs the TX branch of the TX/RX switch with no added loss. Peak PA output power is 27.5±0.5dBm from 1.6 to 3.4GHz, with up to 30% total efficiency at 2V. For TDD LTE applications, better than -30dBc ACLR and -25dB EVM is measured with 16-QAM, 20MHz signals from 1.65 to 3.5GHz, with up to 16.5% average efficiency and 22.9dBm average power. The broadband LNA achieves AV > 14dB, NF=4.3 ± 1.6dB and IIP3 > -7dBm from 1.6 to 3.4GHz while drawing just 6mA from 1V.","PeriodicalId":203521,"journal":{"name":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A frequency-agile RF frontend for multi-band TDD radios in 45nm SOI CMOS\",\"authors\":\"Sushmit Goswami, Helen Kim, J. Dawson\",\"doi\":\"10.1109/RFIC.2013.6569596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A tunable and highly digital RF frontend for multi-band TDD radios is integrated in 45nm SOI CMOS. The PA absorbs the TX branch of the TX/RX switch with no added loss. Peak PA output power is 27.5±0.5dBm from 1.6 to 3.4GHz, with up to 30% total efficiency at 2V. For TDD LTE applications, better than -30dBc ACLR and -25dB EVM is measured with 16-QAM, 20MHz signals from 1.65 to 3.5GHz, with up to 16.5% average efficiency and 22.9dBm average power. The broadband LNA achieves AV > 14dB, NF=4.3 ± 1.6dB and IIP3 > -7dBm from 1.6 to 3.4GHz while drawing just 6mA from 1V.\",\"PeriodicalId\":203521,\"journal\":{\"name\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2013.6569596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2013.6569596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A frequency-agile RF frontend for multi-band TDD radios in 45nm SOI CMOS
A tunable and highly digital RF frontend for multi-band TDD radios is integrated in 45nm SOI CMOS. The PA absorbs the TX branch of the TX/RX switch with no added loss. Peak PA output power is 27.5±0.5dBm from 1.6 to 3.4GHz, with up to 30% total efficiency at 2V. For TDD LTE applications, better than -30dBc ACLR and -25dB EVM is measured with 16-QAM, 20MHz signals from 1.65 to 3.5GHz, with up to 16.5% average efficiency and 22.9dBm average power. The broadband LNA achieves AV > 14dB, NF=4.3 ± 1.6dB and IIP3 > -7dBm from 1.6 to 3.4GHz while drawing just 6mA from 1V.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
