表面充电对MgO膜二次电子产率的影响

2015 IEEE International Vacuum Electronics Conference (IVEC) Pub Date : 2015-04-27 DOI:10.1109/IVEC.2015.7224039

Q. Wei, M. Fu, Shengli Wu, Wenbo Hu, Jintao Zhang

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引用次数: 2

摘要

从充电动力学和电流密度效应两方面分析了表面充电对低能电子轰击MgO薄膜二次电子发射率的影响。表面充电不仅影响入射电子的原始能量，而且影响二次电子发射的效率。我们可以期望这些结果有助于实现低衰减率MgO薄膜的二次电子产率。

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Influence of surface charging on secondary-electron yield of MgO film

The influence of surface charging on secondary electron emission yield of the MgO film bombarded at low energy electron has been analyzed from charging kinetics and current density effects. The surface charging affects not only the original incident electron energy but also the efficiency of secondary electron emission. We can expect that these results are helpful for accomplishing a secondary electron yield with a slow decay rate for MgO thin film.

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2015 IEEE International Vacuum Electronics Conference (IVEC)

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