磁光记录用掺cu Bi, Ga:DyIG和Bi, Al: DyIG薄膜矫顽力和补偿温度的研究

Optical Storage and Information Data Storage Pub Date : 1993-08-13 DOI:10.1117/12.150677

Yongzong Zhou, D. Shen, F. Gan

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引用次数: 2

摘要

采用热解法在玻璃衬底上制备了cu掺杂Bi, Ga:DyIG和Bi, Al:DyIG薄膜，并对其矫顽力(Hc)和补偿温度(Tcomp)进行了研究。对于cu掺杂的Bi, Ga:DyIG和Bi, Al:DyIG薄膜，分别获得了13 kOe和7 kOe的高Hc值。极高的Hc值归因于Cu进入晶格位。

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Study of coercive force and compensation temperature in Cu-doped Bi, Ga:DyIG, and Bi, Al:DyIg films for magneto-optical recording

Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films on glass substrates have been prepared by pyrolysis method, and the coercive force (Hc) and the compensation temperature (Tcomp) were investigated. For Cu-doped Bi, Ga:DyIG and Bi, Al:DyIG films, high Hc values of 13 kOe and 7 kOe were obtained, respectively. The extremely high Hc values were attributed to Cu entering the lattice sites.

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Optical Storage and Information Data Storage

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