{"title":"多极极极npn和p沟道jfet在液氦(10 K)温度附近的运行","authors":"A.K. Kapoor, H.K. Hingarh, T. S. Jayadev","doi":"10.1109/BIPOL.1988.51081","DOIUrl":null,"url":null,"abstract":"Operation of poly bipolar npn and p-channel JFET transistors is described up to 10 K. Current gain of the npn transistor equal to 3 is measured at 9 K. Transconductance of the p-channel JFET remains constant for 60 K>T>10 K. Certain new phenomena are observed in both the devices below 60 K which are attributed to carrier freezeout and high-level injection. These experimental results also tend to suggest that the useful range of operation of these devices can be extended to below liquid nitrogen temperature.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"158 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Operation of poly emitter bipolar npn and p-channel JFETs near liquid helium (10 K) temperature\",\"authors\":\"A.K. Kapoor, H.K. Hingarh, T. S. Jayadev\",\"doi\":\"10.1109/BIPOL.1988.51081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Operation of poly bipolar npn and p-channel JFET transistors is described up to 10 K. Current gain of the npn transistor equal to 3 is measured at 9 K. Transconductance of the p-channel JFET remains constant for 60 K>T>10 K. Certain new phenomena are observed in both the devices below 60 K which are attributed to carrier freezeout and high-level injection. These experimental results also tend to suggest that the useful range of operation of these devices can be extended to below liquid nitrogen temperature.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"158 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Operation of poly emitter bipolar npn and p-channel JFETs near liquid helium (10 K) temperature
Operation of poly bipolar npn and p-channel JFET transistors is described up to 10 K. Current gain of the npn transistor equal to 3 is measured at 9 K. Transconductance of the p-channel JFET remains constant for 60 K>T>10 K. Certain new phenomena are observed in both the devices below 60 K which are attributed to carrier freezeout and high-level injection. These experimental results also tend to suggest that the useful range of operation of these devices can be extended to below liquid nitrogen temperature.<>
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