增益/带宽积为340 GHz的容分行波放大器

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1900-01-01 DOI:10.1109/MCS.1995.470964

J. Pusl, B. Agarwal, R. Pullela, L. Nguyen, M. Le, M. Rodwell, L. Larson, J. Jensen, R. Yu, M. Case

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引用次数: 29

摘要

我们报告电容分行波放大器在1-98 GHz的3-dB带宽下测量到8 dB的中频增益，在1-96 GHz带宽下测量到11 dB增益。电容分割拓扑提高了每个单元的输入Q，使放大器比具有相同有源器件技术的传统设计增加了带宽;使用0.15-/spl mu/m栅极长度的InGaAs/InAlAs hemt，可以实现超过150 GHz的带宽。

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Capacitive-division traveling-wave amplifier with 340 GHz gain/bandwidth product

We report capacitive-division traveling-wave amplifiers having measured midband gains of 8 dB with a 1-98 GHz 3-dB-bandwidth, and 11 dB gain with a 1-96 GHz bandwidth. The capacitive-division topology raises the input Q of each cell, giving the amplifier increased bandwidth over conventional designs with the same active device technology; using 0.15-/spl mu/m gate length InGaAs/InAlAs HEMTs, bandwidths exceeding 150 GHz are feasible.<>

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IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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