{"title":"MOCVD InP太阳能电池的发射极结构","authors":"C. Keavney, V. Haven, S. Vernon","doi":"10.1109/PVSC.1990.111606","DOIUrl":null,"url":null,"abstract":"InP solar cells have been made by metalorganic chemical vapor deposition (MOCVD) with a graded-junction or front-surface-field structure, in which the doping decreases from 3*10/sup 19/ cm/sup -3/ at the surface to 3*10/sup 18/ cm/sup -3/ at the junction. Improvement was observed in the short-wavelength quantum efficiency and in the overall conversion efficiency relative to standard shallow-homojunction cells, indicating that the graded structure improved collection of carriers generated near the surface. A beginning-of-life conversion efficiency of 19.1% AM0 was measured on a 4-cm/sup 2/ cell. Measurements on similar cells showed an average of 4.7% degradation after irradiation with 10/sup 14/-cm/sup -2/ electrons at 1 MeV.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"119","resultStr":"{\"title\":\"Emitter structures in MOCVD InP solar cells\",\"authors\":\"C. Keavney, V. Haven, S. Vernon\",\"doi\":\"10.1109/PVSC.1990.111606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InP solar cells have been made by metalorganic chemical vapor deposition (MOCVD) with a graded-junction or front-surface-field structure, in which the doping decreases from 3*10/sup 19/ cm/sup -3/ at the surface to 3*10/sup 18/ cm/sup -3/ at the junction. Improvement was observed in the short-wavelength quantum efficiency and in the overall conversion efficiency relative to standard shallow-homojunction cells, indicating that the graded structure improved collection of carriers generated near the surface. A beginning-of-life conversion efficiency of 19.1% AM0 was measured on a 4-cm/sup 2/ cell. Measurements on similar cells showed an average of 4.7% degradation after irradiation with 10/sup 14/-cm/sup -2/ electrons at 1 MeV.<<ETX>>\",\"PeriodicalId\":211778,\"journal\":{\"name\":\"IEEE Conference on Photovoltaic Specialists\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"119\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Conference on Photovoltaic Specialists\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1990.111606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Conference on Photovoltaic Specialists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1990.111606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP solar cells have been made by metalorganic chemical vapor deposition (MOCVD) with a graded-junction or front-surface-field structure, in which the doping decreases from 3*10/sup 19/ cm/sup -3/ at the surface to 3*10/sup 18/ cm/sup -3/ at the junction. Improvement was observed in the short-wavelength quantum efficiency and in the overall conversion efficiency relative to standard shallow-homojunction cells, indicating that the graded structure improved collection of carriers generated near the surface. A beginning-of-life conversion efficiency of 19.1% AM0 was measured on a 4-cm/sup 2/ cell. Measurements on similar cells showed an average of 4.7% degradation after irradiation with 10/sup 14/-cm/sup -2/ electrons at 1 MeV.<>
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