高效InGaP/GaAs单结太阳能电池的分析与仿真

2020 International Conference on Computational Intelligence for Smart Power System and Sustainable Energy (CISPSSE) Pub Date : 2020-07-01 DOI:10.1109/CISPSSE49931.2020.9212255

N. Behera, Pruthviraj Panda, M. Jena

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摘要

本文研究了存在两个背BSF区的单键GaAs/GaInP太阳能电池的TCAD仿真。为了提高模拟太阳能电池的性能，必须对gaaia上区、GaInP BSF、gaaia缓冲层进行正确的检测。双BSF层的存在使GaInP分离结太阳电池的I-V特征显著提高(加入η=24%;Jsc = 0.0152 A;Voc =1.356 V, FF =1.199)与单一BSF层的存在$(\eta=18.55{\%}$;Jsc = 0.0148 A;Voc =1.4096 V, FF =0.8867)

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Analysis and Simulation of a High Efficiency InGaP/GaAs Single junction Solar Cell

This paper deals with the TCAD based simulation of single bond GaAs/GaInP solar cell with presence two back BSF region. GaAlAs upper region, GaInP BSF, GaAIAs buffer layers must be correctly examined to inflate the function of mock-uped solar cell. Presence regarding double BSF layer of the GaInP separate junction sun cell displayed deeply elevated I-V feature (addition of η=24%; Jsc = 0.0152 A; Voc =1.356 V, FF =1.199) compared to presence of single BSF layer $(\eta=18.55{\%}$; Jsc = 0.0148 A; Voc =1.4096 V, FF =0.8867)

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来源期刊

2020 International Conference on Computational Intelligence for Smart Power System and Sustainable Energy (CISPSSE)

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