高速高饱和功率半导体波导光电探测器结构

Proceedings of Optical Fiber Communication Conference ( Pub Date : 1997-02-16 DOI:10.1109/OFC.1997.719671

R. Welstand, H. Jiang, J. Zhu, Y.Z. Liu, S. Pappert, P. Yu

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引用次数: 6

摘要

在本工作中，研究了两种同时提高饱和功率和线性度的新方法:a)使用三层波导结构的InGaAsP (/spl lambda//sub g/ = 1.24 /spl mu/m)有源层，通过Franz-Keldysh效应(FKE)工作;b)使用四层大光腔(LOG)不对称波导，使用InGaAs吸收体和无源InGaAsP层。

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High-speed and high-saturation power semiconductor waveguide photodetector structures

In the present work, two new approaches are investigated to simultaneously improve the saturation power and linearity: a) using a three layer waveguide structure with an InGaAsP (/spl lambda//sub g/ = 1.24 /spl mu/m) active layer, that operates through the Franz-Keldysh effect (FKE), and b) using a four-layer large optical cavity (LOG) asymmetric waveguide with InGaAs absorber and a passive InGaAsP layer.

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Proceedings of Optical Fiber Communication Conference (

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