单外延生长的具有14 GHz等增益频率和面发射激光器的反转通道HFET

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303109

P. Kiely, P. Evaldsson, P. Cooke, G. Taylor

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引用次数: 4

摘要

据报道，利用反转通道器件结构的反转通道HFET具有高达14 GHz的高速性能。该晶体管采用与垂直腔双异质结构光电开关(DOES)激光器相同的外延生长和制造技术制造。

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Inversion channel HFET with unity current gain frequency of 14 GHz and surface emitting laser from a single epitaxial growth

High speed capability up to 14 GHz is reported for the inversion channel HFET utilizing the inversion channel device structure. The transistor is fabricated from the same epitaxial growth and with the same fabrication technology as previously used to demonstrate the vertical cavity Double Heterostructure Opto-Electronic Switching (DOES) Laser.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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