用于28ghz LMDS应用的单片InGaAs PIN光电探测器- gaas MHEMT放大器OEIC制造与实现

2002 International Topical Meeting on Microwave Photonics Pub Date : 1900-01-01 DOI:10.1109/MWP.2002.1158885

A. Joshi, Xinde Wang, D. Becker, D. Mohr

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引用次数: 0

摘要

我们在4英寸GaAs衬底上使用高电子迁移率晶体管(MHEMTs)制作了一个单片光电集成电路(OEIC)，由InGaAs PIN光电探测器和共门放大器(CGA)组成。OEIC显示28 GHz时增益为28 dB, FWHM为8 GHz。

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Monolithic InGaAs PIN photodetector-GaAs MHEMT amplifier OEIC fabrication and implementation for 28 GHz LMDS applications

We have fabricated a monolithic Opto-electronic Integrated Circuit (OEIC) comprising of an InGaAs PIN photodetector and a Common Gate Amplifier (CGA) using Metamorphic High Electron Mobility Transistors (MHEMTs) on 4 inch GaAs substrates. The OEIC shows a gain of 28 dB at 28 GHz with an 8 GHz FWHM.

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2002 International Topical Meeting on Microwave Photonics

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