W. Hsu, N. Nujhat, Benjamin Kupp, J. F. Conley, Alan X. Wang
{"title":"具有589 pm/V波长可调性的电调谐硅微环谐振器","authors":"W. Hsu, N. Nujhat, Benjamin Kupp, J. F. Conley, Alan X. Wang","doi":"10.1109/SiPhotonics55903.2023.10141968","DOIUrl":null,"url":null,"abstract":"We demonstrated an electrically tunable silicon microring resonator integrated with high mobility titanium-doped indium oxide/hafnium oxide/silicon MOS capacitor. Narrowing the microring waveguide width to 300 nm achieved an extremely high electro-optic wavelength tunability of 589 pm/V with a high-quality factor of 5200.","PeriodicalId":105710,"journal":{"name":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrically Tunable Silicon Microring Resonator with 589 pm/V Wavelength Tunability\",\"authors\":\"W. Hsu, N. Nujhat, Benjamin Kupp, J. F. Conley, Alan X. Wang\",\"doi\":\"10.1109/SiPhotonics55903.2023.10141968\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrated an electrically tunable silicon microring resonator integrated with high mobility titanium-doped indium oxide/hafnium oxide/silicon MOS capacitor. Narrowing the microring waveguide width to 300 nm achieved an extremely high electro-optic wavelength tunability of 589 pm/V with a high-quality factor of 5200.\",\"PeriodicalId\":105710,\"journal\":{\"name\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"volume\":\"104 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE Silicon Photonics Conference (SiPhotonics)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiPhotonics55903.2023.10141968\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Silicon Photonics Conference (SiPhotonics)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiPhotonics55903.2023.10141968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrically Tunable Silicon Microring Resonator with 589 pm/V Wavelength Tunability
We demonstrated an electrically tunable silicon microring resonator integrated with high mobility titanium-doped indium oxide/hafnium oxide/silicon MOS capacitor. Narrowing the microring waveguide width to 300 nm achieved an extremely high electro-optic wavelength tunability of 589 pm/V with a high-quality factor of 5200.