{"title":"具有负反馈的极低互调GaAs混频器","authors":"K. Onodera, M. Muraguchi","doi":"10.1109/EUMA.1994.337283","DOIUrl":null,"url":null,"abstract":"A novel circuit configuration for GaAs FET mixers is proposed. An RC negative feedback technique on the drain LO injection GaAs FET mixer brings about substantial improvement in the 3rd-order intermodulation distortion property without conversion gain falloff. This effect is still more remarkable with higher LO power at the drain. Measured performance of a fabricated 1.9-GHz-band MMIC GaAs FET mixer shows more than an 8-dB improvement in the 3rd-order intermodulation intercept point over a conventional GaAs FET mixer with increased conversion gain.","PeriodicalId":440371,"journal":{"name":"1994 24th European Microwave Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Very Low-Intermodulation GaAs Mixers with Negative Feedback\",\"authors\":\"K. Onodera, M. Muraguchi\",\"doi\":\"10.1109/EUMA.1994.337283\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel circuit configuration for GaAs FET mixers is proposed. An RC negative feedback technique on the drain LO injection GaAs FET mixer brings about substantial improvement in the 3rd-order intermodulation distortion property without conversion gain falloff. This effect is still more remarkable with higher LO power at the drain. Measured performance of a fabricated 1.9-GHz-band MMIC GaAs FET mixer shows more than an 8-dB improvement in the 3rd-order intermodulation intercept point over a conventional GaAs FET mixer with increased conversion gain.\",\"PeriodicalId\":440371,\"journal\":{\"name\":\"1994 24th European Microwave Conference\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1994 24th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1994.337283\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1994 24th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1994.337283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Very Low-Intermodulation GaAs Mixers with Negative Feedback
A novel circuit configuration for GaAs FET mixers is proposed. An RC negative feedback technique on the drain LO injection GaAs FET mixer brings about substantial improvement in the 3rd-order intermodulation distortion property without conversion gain falloff. This effect is still more remarkable with higher LO power at the drain. Measured performance of a fabricated 1.9-GHz-band MMIC GaAs FET mixer shows more than an 8-dB improvement in the 3rd-order intermodulation intercept point over a conventional GaAs FET mixer with increased conversion gain.
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