半绝缘阻挡层窄束发散锥厚波导激光器的零偏压调制

T. Yamamoto, H. Kobayashi, T. Ishikawa, T. Takeuchi, T. Watanabe, T. Fujii, S. Ogita, M. Kobayashi
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引用次数: 0

摘要

利用半绝缘阻挡层降低寄生电容,实现了窄束发散激光二极管的零偏压调制。具有10.5 mA低阈值电流的激光器即使在85/spl度/C下也能在零偏压条件下实现622 Mbit/s的调制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Zero-bias-voltage modulation of narrow-beam-divergence tapered-thickness waveguide lasers with semi-insulating blocking layer
We demonstrated zero-bias-voltage modulation of narrow-beam-divergence laser diodes by the reduction of the parasitic capacitance using semi-insulating blocking layer. A laser with low threshold current of 10.5 mA enabled 622 Mbit/s modulation under zero-bias-voltage condition even at 85/spl deg/C.
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