T. Yamamoto, H. Kobayashi, T. Ishikawa, T. Takeuchi, T. Watanabe, T. Fujii, S. Ogita, M. Kobayashi
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Zero-bias-voltage modulation of narrow-beam-divergence tapered-thickness waveguide lasers with semi-insulating blocking layer
We demonstrated zero-bias-voltage modulation of narrow-beam-divergence laser diodes by the reduction of the parasitic capacitance using semi-insulating blocking layer. A laser with low threshold current of 10.5 mA enabled 622 Mbit/s modulation under zero-bias-voltage condition even at 85/spl deg/C.